document n umber: 64 732 s09-0314-rev. a, 02-mar-09 www. g d \ v h p l m s 1 p-channel 30-v (d-s) mosfet features ? halogen-free acc ording to iec 61249-2-21 definition ? trenchfet ? power mosfet ? 100 % r g test ed applications ? loa d switches - notebook pcs - desktop pcs product summary v ds (v) r ds(on) ( ) i d (a ) a q g ( t yp.) - 30 0.0098 at v gs = 1 0 v - 19.7 27 nc 0.0165 at v gs = 4.5 v - 15.2 so-8 sd sd sd gd 5 6 7 8 t op v iew 2 3 4 1 s g d p-c hannel mosfet notes: a. base d on t c = 25 c . b. surface mounted on 1" x 1" fr4 board. c. t = 10 s. d. maximum under steady state conditions is 85 c/w. absolute maximum ratings t a = 25 c, unless otherwise noted p a rameter symbol limit unit drain-source voltage v ds - 30 v gat e -source voltage v gs 20 contin uous d rain current (t j = 150 c ) t c = 25 c i d - 19.7 a t c = 70 c - 15.7 t a = 25 c - 13 b, c t a = 70 c - 10. 4 b, c pulsed dr a in current i dm - 50 continous source-drain d i ode current t c = 25 c i s - 4.7 t a = 25 c - 2.1 b, c max i mum power dissipation t c = 25 c p d 5. 7 w t c = 70 c 3. 6 t a = 25 c 2.5 b, c t a = 70 c 1.6 b, c ope r ating junction and storage temperature range t j , t stg - 55 to 150 c thermal resist ance ratings p arameter symb ol typical maximum unit maximum junction-to-ambient b, d t 10 s r thj a 35 50 c /w maximum junction-to-foot (drain) steady state r th jf 18 22 dt . www.daysemi.jp
w ww. g d \ v h p l m s 2 documen t number: 64732 s09-0314-rev. a, 02-mar-09 no t es: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. st resses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specif ications t j = 25 c, unless otherwise noted pa rameter symbol test conditions min. typ. max. unit static drain-source breakdo wn voltage v ds v gs = 0 v , i d = - 2 50 a - 30 v v ds t emper ature coefficient v ds /t j i d = - 250 a - 20 mv/c v gs( t h) t emperature co efficient v gs( t h) /t j 4.9 gate-s o urce threshold voltage v gs ( th) v ds = v gs , i d = - 250 a - 1 . 2 - 2.5 v gate-source leakage i gss v ds = 0 v , v gs = 20 v 100 na zero gate voltage drain current i dss v ds = - 30 v, v gs = 0 v - 1 a v ds = - 30 v , v gs = 0 v , t j = 55 c - 5 on-state drain current a i d( on) v ds - 5 v , v gs = - 10 v - 30 a drain-source on-state resistance a r ds( on) v gs = - 1 0 v, i d = - 13 a 0.0081 0.0098 v gs = - 4.5 v , i d = - 1 0 a 0.0137 0.0165 forward transconductance a g fs v ds = - 15 v , i d = - 13 a 40 s dy nam ic b inpu t capacita nce c iss v ds = - 15 v, v gs = 0 v , f = 1 mhz 2610 pf output capacitance c os s 46 0 re verse transfer capacitance c rs s 39 5 t otal gate charge q g v ds = - 15 v, v gs = - 10 v, i d = - 13 a 53 80 nc v ds = - 15 v, v gs = - 4.5 v , i d = - 13 a 27 41 gate-source charge q gs 8 gate- dr ain charge q gd 13 ga te resistance r g f = 1 mhz 0.4 2.1 4.2 tu r n - o n d e l ay t i m e t d( o n) v dd = - 15 v , r l = 1.5 i d ? - 10 a , v gen = - 4.5 v , r g = 1 52 7 8 ns rise time t r 41 6 2 turn-off delay time t d( off) 36 5 4 fall time t f 15 2 5 tu r n - o n d e l ay t i m e t d( o n) v dd = - 15 v , r l = 1.5 i d ? - 10 a, v gen = - 10 v , r g = 1 12 2 0 rise time t r 91 5 t urn-off delay time t d( off) 42 6 3 fall time t f 91 5 drain - source body diode characteristics continuous source-drain diode current i s t c = 25 c - 4. 7 a pulse diode forward current i sm - 5 0 body diode v oltage v sd i s = - 10 a, v gs = 0 v - 0.8 - 1.2 v body diode reverse recovery time t rr i f = - 10 a, di/dt = 100 a/s, t j = 25 c 2 0 30 ns body diode reverse recovery charge q rr 1 0 20 nc reverse recovery fall time t a 10 ns re v erse recovery rise time t b 9 dt . www.daysemi.jp
document n umber: 64 732 s09-0314-rev. a, 02-mar-09 www. g d \ v h p l m s 3 typica l c haracteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current gate charge 0 10 20 30 40 50 0.0 0.5 1.0 1.5 2.0 v gs =1 0 v thr u 4 v v gs =3v v ds - drain -to-so urce v oltage ( v) - drain c u rrent (a) i d 0.000 0.005 0.010 0.015 0.020 0 1 020304050 v gs =1 0 v v gs =4 . 5 v - on - resistance ( ) r ds(on) i d - drain c u rrent (a) 0 2 4 6 8 10 0 1 02030405060 i d =13a v ds =2 4 v v ds =1 5 v - gate - to-so urce v oltage ( v ) q g - t otal gate charge (nc) v gs transfer ch aracteristics capacitance on-resistance vs. junction temperature 0.0 0.5 1.0 1.5 2.0 01234 t c = 25 c t c =1 2 5 c t c =- 5 5 c v gs - g ate-to-so urce v oltage ( v ) - drain c u rrent (a) i d c rss 0 1000 2000 3000 4000 0 5 10 15 20 25 30 c is s c oss v ds - drain -to-so urce v oltage ( v) c - capacitance (pf) 0.6 0.9 1.2 1.5 1.8 - 50 - 25 0 25 50 75 100 125 150 i d =1 3a v gs =4 . 5 v v gs =1 0 v t j -j unction t emperatu re (c) (normalized) - on - resistance r ds(on ) dt . daysemi.jp
w ww. g d \ v h p l m s 4 documen t number: 64732 s09-0314-rev. a, 02-mar-09 ty pi cal characteristics 25 c, unless otherwise noted sou r ce-drain diode forward voltage threshold voltage 0.1 1 10 100 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 t j = 150 c t j = 25 c v sd -s o u rce-to-drain v oltage ( v) - source c u rrent (a) i s 1.0 1.3 1.6 1.9 2.2 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a (v) v gs( th) t j - t emperatu re (c) on -re sistance vs. gate-to-source voltage single pulse power (junction-to-ambient) 0.00 0.01 0.02 0.03 0.04 02 4 6 8 10 t j = 25 c t j = 125 c - on- resistance ( ) r ds (o n) v gs - g ate-to-so urce v oltage ( v ) 0 20 40 60 80 100 01 1 100. 00 . 0 1 time (s) power (w) 0.1 saf e operating area, junction-to-ambient 100 1 0.1 1 10 100 0.01 10 0.1 t a = 25 c single pulse 100 a limited byr ds (on) * bvdss limited 1m s 10 ms 100 ms 1s 10 s dc v ds - drain -to-so urce v oltage ( v) * v gs > minim u m v gs at which r ds (on) is specified - drain c u rrent (a) i d dt . daysemi.jp
document n umber: 64 732 s09-0314-rev. a, 02-mar-09 www. g d \ v h p l m s 5 typica l c haracteristics 25 c, unless otherwise noted * th e power dissipation p d is b a sed on t j(max) = 15 0 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0 4 8 12 16 20 24 0 25 50 75 100 125 150 t c - case temperat u re (c) i d - drain c u rrent (a) pow e r, junction-to-case 0 2 4 6 8 0 25 50 75 100 125 150 t c - case temperat u re (c) pow er ( w ) po we r, junction-to-ambient 0.0 0.3 0.6 0.9 1.2 1.5 1.8 0 25 50 75 100 125 150 t a -a m b ient temperat u re (c) pow er ( w ) dt . daysemi.jp
w ww. g d \ v h p l m s 6 documen t number: 64732 s09-0314-rev. a, 02-mar-09 ty pi cal characteristics 25 c, unless otherwise noted norm alized t hermal transient im pedance, junction-to-ambient 0.2 0.1 t 1 t 2 notes: p dm 1. d u ty cycle, d = 2. per unit base = r thja = 8 5 c/w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. s u rface mo u nted d u ty c ycle = 0.5 single p ulse 0.02 0.05 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 square w avep ulse d u ration (s) normalized ef fectiv e transient thermal impedance 0.1 0.01 1 no r malized thermal transient impedance, junction-to-foot 10 -3 10 -2 01 1 10 -1 10 -4 0.2 0.1 d u ty c ycle = 0.5 square w avep u lse du ration (s) normalized ef fectiv e transient thermal impedance 1 0.1 0.01 0.05 0.02 single p ulse dt . daysemi.jp
document number: 71 192 11-s ep-06 www.daysemi.jp 1 dim millimeters inch es min max min max a 1.35 1.7 5 0.053 0.069 a 1 0.10 0.2 0 0.00 4 0.008 b 0.35 0.51 0.014 0.020 c 0.19 0.25 0.0075 0.010 d 4.80 5.00 0.189 0.196 e 3.80 4.00 0.150 0.157 e 1.27 bsc 0.050 bsc h 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 l 0.50 0.93 0.020 0.037 q0 8 0 8 s 0.44 0.64 0.018 0.026 ecn: c-06527-rev. i, 11-sep-06 dwg: 5498 4 3 1 2 5 6 8 7 h e h x 45 c all lea d s q 0.101 mm 0.004" l ba 1 a e d 0.25 mm (ga ge pla ne) s oic (narrow): 8-lead jedec p a rt n u m b er: ms -012 s package information
www .daysemi.jp document number: 72606 1 revision: 21-jan-08 application note recommen ded minimum pads for so-8 0.246 (6.248) recommended mi nimum pads dimensions in inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.71 1) 0.050 (1.270) 0.022 (0.559) return to index r e turn to index application note
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